Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
SW6N90
Features
■ High ruggedness
■ R
DS(ON)
(Max 2.3 Ω)@V
GS
=10V
■ Gate Charge (Ty pical 40nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology
like a electronic ballast, and also low power switching mode power appliances.
N-channel TO-262 MO SFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 900 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 6.0* A
Continuous Drain Current (@T
C
=100
o
C) 3.78* A
I
DM
Drain current pulsed (note 1) 24 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 550 mJ
E
AR
Repetitive Avalanche Energy (note 1) 150 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 231 W
Derating Factor above 25
o
C 1.85 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.54
o
C/W
R
thcs
Thermal resistance, Case to Sink -
o
C/W
R
thja
Thermal resistance, Junction to ambient 65
o
C/W
BV
DSS
: 900V
I
D
: 6.0A
R
DS(ON)
: 2.3ohm
1
2
3
1
3
1. Gate 2. Drain 3. Source
TO-262
2
SAMWIN
Item Sales Type Marking Package Packaging
1 SW U 6N90 SW6N90 TO-262 TUBE
Or der Code s