• 当前位置:
  • 首页
  • >
  • PDF资料
  • >
  • SW6N80D PDF文件及第1页内容在线浏览

SW6N80D

SW6N80D首页预览图
型号: SW6N80D
PDF文件:
  • SW6N80D PDF文件
  • SW6N80D PDF在线浏览
功能描述: N-channel Enhanced mode TO-251N/TO-220F/TO-252 MOSFET
PDF文件大小: 1455.34 Kbytes
PDF页数: 共7页
制造商: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.]
制造商LOGO: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.] LOGO
制造商网址: http://www.samwinsemi.com
捡单宝SW6N80D
PDF页面索引
120%
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0 1/7
SW6N80D
N-channel Enhanced mode TO-251N/TO-220F/TO-252 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251N TO-220F TO-252
V
DSS
Drain to source voltage 800 V
I
D
Continuous drain current (@T
C
=25
o
C) 6* A
Continuous drain current (@T
C
=100
o
C) 3.8* A
I
DM
Drain current pulsed (note 1) 24 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 180 mJ
E
AR
Repetitive avalanche energy (note 1) 15 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 178.6 23.1 235.8 W
Derating factor above 25
o
C 1.4 0.19 1.89 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251N TO-220F TO-252
R
thjc
Thermal resistance, Junction to case 0.7 5.4 0.53
o
C/W
R
thja
Thermal resistance, Junction to ambient 90 52
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 800V
I
D
: 6A
R
DS(ON)
: 2.0Ω
1. Gate 2. Drain 3. Source
TO-251N
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW N 6N80D
SW6N80D TO-251N TUBE
2 SW F 6N80D SW6N80D TO-220F TUBE
3 SW D 6N80D SW6N80D TO-252 REEL
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 2.0)@V
GS
=10V
Low Gate Charge (Typ 32nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED , Charge, SMPS
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-220F
1
2
3
TO-252
1
2
3
购买、咨询产品请填写询价信息:(3分钟左右您将得到回复)
询价型号*数量*批号封装品牌其它要求
删除
删除
删除
删除
删除
增加行数
  •  公司名:
  • *联系人:
  • *邮箱:
  • *电话:
  •  QQ:
  •  微信:

  • 关注官方微信

  • 联系我们
  • 电话:13714778017
  • 周一至周六:9:00-:18:00
  • 在线客服:

天天IC网由深圳市四方好讯科技有限公司独家运营

天天IC网 ( www.ttic.cc ) 版权所有©2014-2023 粤ICP备15059004号

因腾讯功能限制,可能无法唤起QQ临时会话,(点此复制QQ,添加好友),建议您使用TT在线询价。

继续唤起QQ 打开TT询价