Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 4.0 1/6
N-channel Enhanced mode TO-220F/TO-252/TO-251N MOSFET
Absolute maximum ratings
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-252 TO-251N
R
thjc
Thermal resistance, Junction to case 5.20 0.61 0.52
o
C/W
R
thja
Thermal resistance, Junction to ambient 47.8 87.1
o
C/W
BV
DSS
: 600V
I
D
: 6A
R
DS(ON)
:1.4Ω
1
2
3
SW6N60D
Item Sales Type Marking Package Packaging
1 SW F 6N60D
SW6N60D TO-220F TUBE
2 SW D 6N60D
SW6N60D TO-252 REEL
3 SW N 6N60D
SW6N60D TO-251N TUBE
Order Codes
Symbol Parameter
Value
Unit
TO-220F TO-252 TO-251N
V
DSS
Drain to source voltage 600 V
I
D
Continuous drain current (@T
C
=25
o
C) 6* A
Continuous drain current (@T
C
=100
o
C) 3.8* A
I
DM
Drain current pulsed (note 1) 24 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 215 mJ
E
AR
Repetitive avalanche energy (note 1) 30 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 24 205 240 W
Derating factor above 25
o
C 0.19 1.64 1.92 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
1
2
3
TO-220F TO-252
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 1.4Ω)@V
GS
=10V
Low Gate Charge (Typ 23nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: UPS,Inverter,TV-POWER
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-251N
1
2
3