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SW69N65K2

SW69N65K2首页预览图
型号: SW69N65K2
PDF文件:
  • SW69N65K2 PDF文件
  • SW69N65K2 PDF在线浏览
功能描述: N-channel Enhanced mode TO-247 MOSFET
PDF文件大小: 583.92 Kbytes
PDF页数: 共6页
制造商: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.]
制造商LOGO: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.] LOGO
制造商网址: http://www.samwinsemi.com
捡单宝SW69N65K2
PDF页面索引
120%
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 2.0 1/6
SW69N65K2
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 69* A
Continuous drain current (@T
C
=100
o
C) 43* A
I
DM
Drain current pulsed (note 1) 276 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 2335 mJ
E
AR
Repetitive avalanche energy (note 1) 235 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 625 W
Derating factor above 25
o
C 5 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.2
o
C/W
R
thja
Thermal resistance, Junction to ambient 36
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW T 69N65K2 SW69N65K2 TO-247 TUBE
N-channel Enhanced mode TO-247 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 32mΩ)
Low Gate Charge (Typ 181nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,PC Power
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 69A
R
DS(ON)
: 32m
1
2
3
TO-247
1
2
3
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