Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.4 Ω)@V
GS
=10V
■ Gate Charge (Typ 22nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics. This power MOSFET is usually used
at h igh ef f ic ient DC t o DC converter block and SMPS.
It’s ty pical application is TV and monitor.
N-channel TO-220/D-PAK MOSFET
A bsolute maxi mu m ratings
Symbol Parameter
Value
Unit
TO-220 TO-252
V
DSS
Drain to Source Voltage 200 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 10* A
Continuous Drain Current (@T
C
=100
o
C) 6.3* A
I
DM
Drain current pulsed (note 1) 40 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 600 mJ
E
AR
Repetitive Avalanche Energy (note 1) 120 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 132 148 W
Derating Factor above 25
o
C 1.06 1.18 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter
Value
Unit
TO-220 TO-252
R
thjc
Thermal resistance, Junction to case 0.95 0.85
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.5 -
o
C/W
R
thja
Thermal resistance, Junction to ambient 57.5 -
o
C/W
*. Drain current is lim ited by junction tem perature.
BV
DSS
: 200V
I
D
: 10A
R
DS(ON)
: 0.4ohm
1. Gate 2. Drain 3. Source
1
2
3
1
2
3
TO-220
SW630A
SAMWIN
Or der Code s
2
3
1
TO-252
Item Sales Type Marking Package Packaging
1 SW P 630A
SW630 TO-220 TUBE
2 SW D 630A
SW630 TO-252 REEL
