Copyr ight @ SEMIP O WER Ele c t ronic Te c hnology Co., Ltd. All right s rese rved.
Oct. 2015. Rev. 2.0 1/6
N-channel Enhancement mode TO-251 MOSFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 60 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 60* A
Continuous Drain Current (@T
C
=100
o
C) 37.8* A
I
DM
Drain current pulsed (note 1) 240 A
V
GS
Gate to Source Voltage ±20 V
E
AS
Single pulsed Avalanche Energy (note 2) 228 mJ
E
AR
Repetitive Avalanche Energy (note 1) 25 mJ
dv/dt Peak diode Recovery dv/ dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 119 W
Derating Factor above 25
o
C 0.95 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Th ermal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 1.05
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 84
o
C/W
BV
DSS
: 60V
I
D
: 60A
R
DS(ON)
:11mΩ@V
GS
=10V
14.4mΩ@V
GS
=4.5V
1
2
3
SW60N06V1
1
2
3
1. Gate 2. Drain 3. Source
TO-251
Item Sales Type Marking Package Packaging
1 SW I 60N06V1 SW60N06V1 TO-251 TUBE
Or der Code s
*. Drain current is limited by j unction tem perature.
Features
High ruggedness
R
DS(ON)
(Typ 11mΩ)@V
GS
=10V
R
DS(ON)
(Typ 14.4mΩ)@V
GS
=4.5V
Gate Charge (Typ 72nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: DC-CD,Motor Control,
Synchronous Rect if i c at ion
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.