Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.2.0
Features
■ High ruggedness
■ R
DS(ON)
(Max 16.8mΩ)@V
GS
=10V
■ Gate Charge (Typ 41nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant
topology like a electronic ballast, and also low power switching mode power appliances.
N-channel D-PAK/TO-220 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-252 TO-220
V
DSS
Drain to Source Voltage 60 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 50* A
Continuous Drain Current (@T
C
=100
o
C) 32* A
I
DM
Drain current pulsed (note 1) 200 A
V
GS
Gate to Source Voltage
± 20
V
E
AS
Single pulsed Avalanche Energy (note 2) 180 mJ
E
AR
Repetitive Avalanche Energy (note 1) 23.4 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 87.4 114.7 W
Derating Factor above 25
o
C 0.7 0.9 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-252 TO-220
R
thjc
Thermal resistance, Junction to case 1.43 1.09
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 71.8 53.1
o
C/W
1/6
*. Drain current is limited by junction temperature.
BV
DSS
: 60V
I
D
: 50A
R
DS(ON)
: 16.8mΩ
1
2
3
1. Gate 2. Drain 3. Source
1
2
3
TO-252
SW50N06T
SAMWIN
Item Sales Type Marking Package Packaging
1 SW D 50N06
SW50N06T TO-252 REEL
2 SW P 50N06
SW50N06T TO-220 TUBE
Order Codes
TO-220
1
2
3