Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0 1/7
SW4N80K
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
V
DSS
Drain to source voltage 800 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 40 mJ
E
AR
Repetitive avalanche energy (note 1) 5 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 16.9 104.2 96.2 W
Derating factor above 25
o
C 0.14 0.83 0.77 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
R
thjc
Thermal resistance, Junction to case 7.4 1.2 1.3
o
C/W
R
thja
Thermal resistance, Junction to ambient 54 90
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 800V
I
D
: 4A
R
DS(ON)
: 1.8Ω
1. Gate 2. Drain 3. Source
TO-220F
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 4N80K
SW4N80K TO-220F TUBE
2 SW N 4N80K
SW4N80K TO-251N TUBE
3 SW D 4N80K
SW4N80K TO-252 REEL
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 1.8Ω)@V
GS
=10V
Low Gate Charge (Typ 13nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED, Charge, Adaptor
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-251N TO-252
1
2
3
1
2
3