Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Dec. 2016. Rev. 3.0 1/6
SW4N80D
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-251N
V
DSS
Drain to source voltage 800 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 128 mJ
E
AR
Repetitive avalanche energy (note 1) 15 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 22.3 192.3 W
Derating factor above 25
o
C 0.18 1.54 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-251N
R
thjc
Thermal resistance, Junction to case 5.6 0.65
o
C/W
R
thja
Thermal resistance, Junction to ambient 50 87
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 4N80D
SW4N80D TO-220F TUBE
2 SW N 4N80D
SW4N80D TO-251N TUBE
N-channel Enhanced mode TO-220F/TO-251N MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 3.2Ω)@V
GS
=10V
Low Gate Charge (Typ 19nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Adaptor, LED, Industrial Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 800V
I
D
: 4A
R
DS(ON)
: 3.2Ω
1
2
3
TO-220F
1
2
3
TO-251N
1
2
3