Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Sep. 2016. Rev. 3.0 1/6
SW4N70K2
N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
V
DSS
Drain to source voltage 700 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 50 mJ
E
AR
Repetitive avalanche energy (note 1) 5 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 16.7 73.5 65.4 W
Derating factor above 25
o
C 0.13 0.59 0.53 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
R
thjc
Thermal resistance, Junction to case 7.5 1.7 1.9
o
C/W
R
thja
Thermal resistance, Junction to ambient 86 103
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
:700V
I
D
: 4 A
R
DS(ON)
:1.15Ω
1. Gate 2. Drain 3. Source
TO-220F
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 4N70K2
SW4N70K2 TO-220F TUBE
2 SW N 4N70K2
SW4N70K2 TO-251N TUBE
3 SW D 4N70K2
SW4N70K2 TO-252 REEL
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 1.15Ω)@V
GS
=10V
Low Gate Charge (Typ 7.1nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED, Charge, Adaptor
General Description
This power MOSFET is produced with advanced super junction technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-251N
1
2
3
TO-252
1
2
3