Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW4N70D1
May. 2017. Rev. 5.0 1/6
N-channel Enhanced mode TO-251S/TO-251N/TO-251N-S2 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251S TO-251N
TO-251N-
S2
V
DSS
Drain to source voltage 700 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.4* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 160 mJ
E
AR
Repetitive avalanche energy (note 1) 20 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 164 W
Derating factor above 25
o
C 1.3 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251S TO-251N
TO-251N-
S2
R
thjc
Thermal resistance, Junction to case 0.76
o
C/W
R
thja
Thermal resistance, Junction to ambient 90
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 700V
I
D
: 4A
R
DS(ON)
: 2.1Ω
1. Gate 2. Drain 3. Source
TO-251S
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW SI 4N70D1
SW4N70D1 TO-251S TUBE
2 SW N 4N70D1
SW4N70D1 TO-251N TUBE
3 SW NC 4N70D1
SW4N70D1 TO-251N-S2 TUBE
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 2.1Ω)@V
GS
=10V
Low Gate Charge (Typ 18nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Adapter,LED,Charger
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-251N
1
2
3
TO-251N-S2
1
2
3