Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2017. Rev. 3.0 1/6
SW4N65DD
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251N
TO-251N-
S2
TO-220F TO-220SF
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 184 mJ
E
AR
Repetitive avalanche energy (note 1) 13 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 192 19 W
Derating factor above 25
o
C 1.5 0.15 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251N
TO-
251N-S2
TO-220F TO-220SF
R
thjc
Thermal resistance, Junction to case 0.65 6.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 94 50
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW N 4N65DD
SW4N65DD TO-251N TUBE
2 SW NC 4N65DD
SW4N65DD TO-251N-S2 TUBE
3
SW F 4N65DD
SW4N65DD TO-220F TUBE
4
SW MN 4N65DD
SW4N65DD TO-220SF TUBE
N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 2.4Ω)@V
GS
=10V
Low Gate Charge (Typ 16nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED , Charge, Adaptor
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 4A
R
DS(ON)
: 2.4Ω
1
2
3
TO-251N
1
2
3
TO-251N-S2
1
2
3
TO-220F
1
2
3
TO-220SF
1
2
3