Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2017. Rev. 5.0 1/6
SW4N65DA
N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
TO-251NX-
S4
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 107 mJ
E
AR
Repetitive avalanche energy (note 1) 6 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 18.4 113.6 W
Derating factor above 25
o
C 0.15 0.9 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-251N TO-252
TO-251NX-
S4
R
thjc
Thermal resistance, Junction to case 6.8 1.1
o
C/W
R
thja
Thermal resistance, Junction to ambient 60 105 105
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 650V
I
D
: 4A
R
DS(ON)
:3.35Ω
1. Gate 2. Drain 3. Source
G
D
S
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 4N65DA
SW4N65DA TO-220F TUBE
2 SW N 4N65DA
SW4N65DA TO-251N TUBE
3 SW D 4N65DA
SW4N65DA TO-252 REEL
4 SW NB 4N65DA
SW4N65DA TO-251NX-S4 TUBE
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 3.35Ω)@V
GS
=10V
Low Gate Charge (Typ 13nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charge, Adaptor,
LED, TV-Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
TO-251N
TO-220F
1
2
3
TO-252
1
2
3
TO-251NX-S4
1
2
3