Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 4.0
Features
■ High ruggedness
■ R
DS(ON)
(Max 1.15Ω)@V
GS
=10V
■ Gate Charge (Typ 13nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
N-channel TO-220F/I-PAK/D-PAK MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-251 TO-252
V
DSS
Drain to Source Voltage 600 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 4* A
Continuous Drain Current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 50 mJ
E
AR
Repetitive Avalanche Energy (note 1) 5 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 23.5 106.4 101.4 W
Derating Factor above 25
o
C 0.19 0.85 0.81 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value Unit
TO-220F TO-251 TO-252
R
thjc
Thermal resistance, Junction to case 5.31 1.18 1.23
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 49.5 82.8 84.9
o
C/W
1/6
*. Drain current is limited by junction temperature.
BV
DSS
: 600V
I
D
: 4A
R
DS(ON)
: 1.15Ω
1
2
3
1. Gate 2. Drain 3. Source
TO-251
SW4N60K
SAMWIN
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 4N60
SW4N60K TO-220F TUBE
2 SW I 4N60
SW4N60K TO-251 TUBE
3 SW D 4N60
SW4N60K TO-252 REEL
TO-220F TO-252
1
2
3
1
2
3
