Copyr ight @ SEMIP O WER Ele c t ronic Te c hnology Co., Ltd. All right s rese rved.
Oct. 2015. Rev. 2.0 1/7
SW4N60DA
A bsolute maxi mu m ratings
Symbol Parameter
Value
Unit
TO-252 TO-220F TO-251S
V
DSS
Drain to source voltage 600 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source voltage ±30 V
E
AS
Single pulsed avalanche energy (note 2) 171.2 mJ
E
AR
Repetitive avalanche energy (note 1) 24.3 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 109.6 18.9 140.2 W
Derating factor above 25
o
C 0.88 0.15 0.83 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Th ermal ch aracteristics
Symbol Parameter
Value
Unit
TO-252 TO-220F TO-251S
R
thjc
Thermal resistance, Junction to case 1.14 6.6 1.2
o
C/W
R
thja
Thermal resistance, Junction to ambient 91.3 55 93
o
C/W
*. Drain current is limited by j unction tem perature.
1. Gate 2. Drain 3. Source
TO-252
Or der Code s
Item Sales Type Marking Package Packaging
1 SW D 4N60DA SW4N60DA TO-252 REEL
2 SW F 4N60DA SW4N60DA TO-220F TUBE
3 SW SI 4N60DA SW4N60DA TO-251S TUBE
1
2
3
N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ3.35Ω)@V
GS
=10V
Low Gate Charge (Typ 9.6nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC,LED
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 600V
I
D
: 4A
R
DS(ON)
: 3.35Ω
1
2
3
1
2
3
1
2
3
TO-220F
TO-251S
