Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW4N40DC
Nov. 2015. Rev. 2.0 1/6
N-channel Enhanced mode TO-251S/TO-252 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251S TO-252
V
DSS
Drain to source v oltage 400 V
I
D
Continuous drain current (@T
C
=25
o
C) 4* A
Continuous drain current (@T
C
=100
o
C) 2.5* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to source v oltage
±30
V
E
AS
Single pulsed avalanche energy (note 2) 142 mJ
E
AR
Repetitive avalanche energy (note 1) 20 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 104 83.3 W
Derating factor abov e 25
o
C 0.8 0.7 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Max imum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251S TO-252
R
thjc
Thermal resistance, Junction to case 1.2 1.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 92 85
o
C/W
*. Drain current is lim i ted by junction temperature.
BV
DSS
: 400V
I
D
: 4A
R
DS(ON)
: 1.4Ω
1. Gate 2. Drain 3. Source
TO-251S
1
2
3
Order Code s
Item Sales Type Marking Package Packaging
1 SWSI 4N40DC SW4N40DC TO-251S TUBE
2 SWD 4N40DC SW4N40DC TO-252 REEL
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 1.4Ω)@V
GS
=10V
Low Gate Charge ( Typ 11.7nC)
Improved dv/dt Capability
100% Avalanche T ested
Application:LED, DC -DC
General Descr iption
This pow er MOSFE T is produced w ith advanced technology of SAM WIN.
This technology enable the pow er MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially ex cellent avalanche
characteristics.
TO-252
1
2
3
