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SW47N65K
Jun. 2016. Rev. 3.0 1/6
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 47* A
Continuous drain current (@T
C
=100
o
C) 29.6* A
I
DM
Drain current pulsed (note 1) 188 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 1200 mJ
E
AR
Repetitive avalanche energy (note 1) 150 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 328.9 W
Derating factor above 25
o
C 2.6 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.38
o
C/W
R
thja
Thermal resistance, Junction to ambient 34.9
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
TO-247
Order Codes
Item Sales Type Marking Package Packaging
1 SW T 47N65 K
SW47N65K TO-247 TUBE
1
2
3
N-channel Enhanced mode TO-247 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 60mΩ)@V
GS
=10V
Low Gate Charge (Typ 152nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,PC Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 47A
R
DS(ON)
:60mΩ
1
2
3
