Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2015. Rev. 1.0 1/6
SW417J
105.1
o
C/W on a 1 in
2
pad of 2oz copper.
P-channel Enhanced mode SOT-23 MOSFET
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage -30 V
I
D
Continuous drain current (@T
C
=25
o
C) -4* A
Continuous drain current (@T
C
=100
o
C) -2.5* A
I
DM
Drain current pulsed (note 1) -16 A
V
GS
Gate to source voltage
± 20
V
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 1.2 W
Derating factor above 25
o
C 0.01 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thja
Thermal resistance, Junction to ambient（note）
105.1
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: -30V
I
D
: -4A
R
DS(ON)
: 54mΩ @V
GS
=-10V
77mΩ @V
GS
=-4.5V
SOT-23
G
D
S
Order Codes
Item Sales Type Marking Package Packaging
1 SW R 417J
SW417J SOT-23 REEL
Features
High ruggedness
Low R
DS(ON)
(Typ 54mΩ)@V
GS
=-10V
Low R
DS(ON)
(Typ 77mΩ)@V
GS
=-4.5V
Low Gate Charge (Typ 10nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: DC-DC Converter,
Motor Control
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
1. Gate 2. Drain 3. Source
1
2
3
