Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jul. 2015. Rev. 1.0 1/6
SW3416J
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 20 V
I
D
Continuous drain current (@T
C
=25
o
C) 7* A
Continuous drain current (@T
C
=100
o
C) 4.4* A
I
DM
Drain current pulsed (note 1) 28 A
V
GS
Gate to source voltage
± 12
V
E
AS
Single pulsed avalanche energy (note 2) 43 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 1.37 W
Derating factor above 25
o
C 0.01 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thja
Thermal resistance, Junction to ambient(note)
91
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW R 3416J
3416J SOT-23 REEL
N-channel Enhanced mode SOT-23 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 18mΩ)@V
GS
=4.5V
(Typ 21mΩ)@V
GS
=2.5V
(Typ 25mΩ)@V
GS
=1.8V
Low Gate Charge (Typ 12.5nC)
Improved dv/dt Capability
ESD Protection-Class 2(HBM Mode)
100% Avalanche Tested
Application:DC-DC Converter,Inverter,
Synchronous Rectification
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 20 V
I
D
: 7A
R
DS(ON)
: 18mΩ@V
GS
=4.5V
21mΩ@V
GS
=2.5V
25mΩ@V
GS
=1.8V
1
2
3
SOT-23
1
2
3
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design. 91
o
C/W on a 1 in
2
pad of 2oz copper.
ESD Protection