Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0 1/7
SW2N70D
Absolute maximum ratings
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251N TO-252 TO-126 TO-220F
R
thjc
Thermal resistance, Junction to case 1.6 1.5 1.3 6.9
o
C/W
R
thja
Thermal resistance, Junction to ambient 83 81 53
o
C/W
1. Gate 2. Drain 3. Source
Item Sales Type Marking Package Packaging
1 SW N 2N70D
SW2N70D TO-251N TUBE
2 SW D 2N70D
SW2N70D TO-252 REEL
3 SW L 2N70D
SW2N70D TO-126 TUBE
4 SW F 2N70D
SW2N70D TO-220F TUBE
Order Codes
Symbol Parameter
Value
Unit
TO-251N TO-252 TO-126 TO-220F
V
DSS
Drain to source voltage 700 V
I
D
Continuous drain current (@T
C
=25
o
C) 2* A
Continuous drain current (@T
C
=100
o
C) 1.2* A
I
DM
Drain current pulsed (note 1) 8 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 50 mJ
E
AR
Repetitive avalanche energy (note 1) 5 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 78.1 83.3 96.2 18.1 W
Derating factor above 25
o
C 0.63 0.67 0.77 0.14 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
TO-251N
1
2
3
*. Drain current is limited by junction temperature.
N-channel Enhanced mode TO-251N/TO-252/TO-126/TO-220F MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 5Ω)@V
GS
=10V
Low Gate Charge (Typ 11nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charger,LED
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 700V
I
D
: 2A
R
DS(ON)
: 5Ω
1
2
3
1
2
3
TO-252 TO-126
TO-220F
1
2
3
1
2
3