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SW2N40D
Jun. 2016. Rev. 3.0 1/6
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-92 SOT-223
V
DSS
Drain to source voltage 400 V
I
D
Continuous drain current (@T
C
=25
o
C) 2* A
Continuous drain current (@T
C
=100
o
C) 1.2* A
I
DM
Drain current pulsed (note 1) 8 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 40 mJ
E
AR
Repetitive avalanche energy (note 1) 5 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 1.1 6.3 W
Derating factor above 25
o
C 0.009 0.05 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-92 SOT-223
R
thjc
Thermal resistance, Junction to case 32.8 20
o
C/W
R
thja
Thermal resistance, Junction to ambient 111
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SWC 2N40D
SW2N40D TO-92 TAPE
2 SW SA 2N40D
SW2N40D SOT-223 REEL
N-channel Enhanced mode TO-92/SOT-223 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 2.8Ω)@V
GS
=10V
Low Gate Charge (Typ 7nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC,LED
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 400V
I
D
: 2A
R
DS(ON)
: 2.8Ω
1
2
3
1. Gate 2. Drain 3. Source
TO-92
SOT-223
1
2
3
1
2
3