Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
Features
■ High ruggedness
■ R
DS(ON)
(Max0.24Ω)@V
GS
=10V
■ Gate Charge (Typical 13nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
N-channel SOT-23 MOSFET
Absolute maximum ratings
1/5
BV
DSS
: 100V
I
D
: 2A
R
DS(ON)
:0.24Ω
1
2
3
SAMWIN
Item Sales Type Marking Package Packaging
1 SW E 2N10
SW2N10 SOT-23 RELL
Order Codes
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 100 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 2* A
Continuous Drain Current (@T
C
=100
o
C) 1.26* A
I
DM
Drain current pulsed (note 1) 8 A
V
GS
Gate to Source Voltage
± 15
V
E
AS
Single pulsed Avalanche Energy (note 2) 64 mJ
E
AR
Repetitive Avalanche Energy (note 1) 5 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
*. Drain current is limited by junction temperature.
1. Gate 2. Source 3. Drain
1
2
3
SOT-23
SW2N10
