Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0 1/5
SAMWIN
Features
■ High ruggedness
■ R
DS(ON)
(Max 2.5 Ω)@V
GS
=10V
■ Gate Charge (Typical 34nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel MOSFET
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 600 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 4.0* A
Continuous Drain Current (@T
C
=100
o
C) 2.2* A
I
DM
Drain current pulsed (note 1) 16 A
V
GS
Gate to Source Voltage ± 30 V
E
AS
Single pulsed Avalanche Energy (note 2) 342 mJ
E
AR
Repetitive Avalanche Energy (note 1) 32 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 4.5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 270 W
Derating Factor above 25
o
C 2.16 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.46
o
C/W
R
thja
Thermal resistance, Junction to ambient 80
o
C/W
BV
DSS
: 600V
I
D
: 4.0A
R
DS(ON)
: 2.5ohm
1
2
3
1. Gate 2. Drain 3. Source
1
2
3
IPAK
SW226NVSW226NV
Item Sales Type Marking Package Packaging
1 SW I 226NV SW226NV IPAK TUBE
2 SW D 226NV SW226NV DPAK REEL
Order Codes
DPAK
1
2
3
*. Drain current is limited by junction temperature.
