Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev.1.0
Features
■ High ruggedness
■ R
DS(ON)
(Max4.5mΩ)@V
GS
=10V
■ Gate Charge (Typical 256nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
N-channel TO-220 MOSFET
Absolute maximum ratings
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.3
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 50
o
C/W
1/5
BV
DSS
: 40V
I
D
: 210A
R
DS(ON)
:4.5mΩ
1
2
3
SW210N04
SAMWIN
Item Sales Type Marking Package Packaging
1 SW P 210N04
SW210N04 TO-220 TUBE
Order Codes
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 40 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 210* A
Continuous Drain Current (@T
C
=100
o
C) 132.3* A
I
DM
Drain current pulsed (note 1) 840 A
V
GS
Gate to Source Voltage
± 20
V
E
AS
Single pulsed Avalanche Energy (note 2) 750 mJ
E
AR
Repetitive Avalanche Energy (note 1) 258 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 388.5 W
Derating Factor above 25
o
C 3.1 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
1
2
3
TO-220