Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.27Ω)@V
GS
=10V
■ Gate Charge (Typ 103 nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching mode power appliances.
N-channel TO-3P MOSFET
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 500 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 20* A
Continuous Drain Current (@T
C
=100
o
C) 12.6* A
I
DM
Drain current pulsed (note 1) 80 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 2240 mJ
E
AR
Repetitive Avalanche Energy (note 1) 500 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 386 W
Derating Factor above 25
o
C 3.1 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.32
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.3
o
C/W
R
thja
Thermal resistance, Junction to ambient 37.1
o
C/W
1/5
BV
DSS
: 500V
I
D
: 20A
R
DS(ON)
: 0.27Ω
1
2
3
SW20N50U
SAMWIN
Item Sales Type Marking Package Packaging
1 SWW 20N50
SW20N50U TO-3P TUBE
Order Codes
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
1
2
3
TO-3P