Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6
SW20N03A
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 30 V
I
D
Continuous drain current (@T
C
=25
o
C) 5.7* A
Continuous drain current (@T
C
=100
o
C) 3.6* A
I
DM
Drain current pulsed (note 1) 23 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 41 mJ
E
AR
Repetitive avalanche energy (note 1) 3 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 1.5 W
Derating factor above 25
o
C 0.01 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thja
Thermal resistance, Junction to ambient 86
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW H 20N03A
SW20N03A DFN3*3 REEL
N-channel Enhanced mode DFN3*3 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 19mΩ)@V
GS
=10V
(Typ 23mΩ)@V
GS
=4.5V
Low Gate Charge (Typ 14nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC Converter,Inverter,
Synchronous Rectification
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
:30 V
I
D
: 5.7A
R
DS(ON)
: 19mΩ@V
GS
=10V
23mΩ@V
GS
=4.5V
G(4)
D(5,6,7,8)
S(1,2,3)
DFN3*3
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
86
o
C/W on a 1 in
2
pad of 2oz copper.