Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 2.0
Features
■ High ruggedness
■ R
DS(ON)
(Max8.5Ω)@V
GS
=10V
■ Gate Charge (Typical 6.8 nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
N-channel I-PAK/TO-92 MOSFET
Absolute maximum ratings
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251 TO-92
R
thjc
Thermal resistance, Junction to case 1.9 30.1
o
C/W
R
thjcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 90 113.5
o
C/W
1/6
BV
DSS
: 600V
I
D
: 1A
R
DS(ON)
:8.5Ω
1
2
3
SW1N60D
SAMWIN
Item Sales Type Marking Package Packaging
1 SW I 1N60
SW1N60D TO-251 TUBE
2 SW C 1N60
SW1N60D TO-92 TAPE
Order Codes
Symbol Parameter
Value
Unit
TO-251 TO-92
V
DSS
Drain to Source Voltage 600 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 1* A
Continuous Drain Current (@T
C
=100
o
C) 0.6* A
I
DM
Drain current pulsed (note 1) 4 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 68 mJ
E
AR
Repetitive Avalanche Energy (note 1) 8 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 65.9 4.2 W
Derating Factor above 25
o
C 0.53 0.03 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
1
2
3
TO-251
TO-92
1
2
3