Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
June. 2014. Rev.1.0
Features
■ High ruggedness
■ R
DS(ON)
(Max0.25Ω)@V
GS
=10V
■ Gate Charge (Typical 43nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
N-channel TO-220 /TO-220F MOSFET
Absolute maximum ratings
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220 TO-220F
R
thjc
Thermal resistance, Junction to case 0.46 3.88
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 55.4 45.1
o
C/W
1/6
BV
DSS
: 650V
I
D
: 16A
R
DS(ON)
:0.25Ω
1
2
3
SW16N65K
SAMWIN
Item Sales Type Marking Package Packaging
1 SW P 16N65K
SW16N65K TO-220 TUBE
2 SW F 16N65K
SW16N65K TO-220F TUBE
Order Codes
Symbol Parameter
Value
Unit
TO-220 TO-220F
V
DSS
Drain to Source Voltage 650 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 16* A
Continuous Drain Current (@T
C
=100
o
C) 10.1* A
I
DM
Drain current pulsed (note 1) 64 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 300 mJ
E
AR
Repetitive Avalanche Energy (note 1) 16 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 271.7 32.2 W
Derating Factor above 25
o
C 2.2 0.26 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
TO-220
TO-220F
1
2
3
1
2
3
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
