Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 2.0 1/6
SW15N04V
N-channel Enhanced mode SOP-8/DFN5x6 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
SOP-8 DFN5x6
V
DSS
Drain to source voltage 40 V
I
D
Continuous drain current (@T
C
=25
o
C) 15* A
Continuous drain current (@T
C
=100
o
C) 9.5* A
I
DM
Drain current pulsed (note 1) 60 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 236 mJ
E
AR
Repetitive avalanche energy (note 1) 9 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 2.60 1.34 W
Derating factor above 25
o
C 0.02 0.01 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
SOP-8 DFN5x6
R
thja
Thermal resistance, Junction to ambient 48 93
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 40V
I
D
: 15A
R
DS(ON)
: 5.8mΩ@ VGS=10V
6.5mΩ @ VGS=4.5V
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW K15N04V
SW15N04V SOP-8 REEL
2 SW HA15N04V
SW15N04V DFN5x6 REEL
Features
High ruggedness
Low R
DS(ON)
(Typ 5.8mΩ)@V
GS
=10V
(Typ 6.5mΩ)@V
GS
=4.5V
Low Gate Charge (Typ 49nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: DC-DC Converter,
Motor Control, Power Supplies
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
SOP-8
DFN5x6
G
S
S
S
D
D
D
D
1
2
3