Copyr ight@ SEM IPOW E R Ele ctronic Technology Co., Ltd. All rights reser ved. July. 2013. Rev. 3.0 1/5
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.52Ω)@V
GS
=10V
■ Gate Charge (Ty pical 29nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a
electronic ballast, and also low power switching mode power appliances.
N-channel TO-220F MOSFET
A bsolute maxi mu m ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 500 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 13.0* A
Continuous Drain Current (@T
C
=100
o
C) 8.2* A
I
DM
Drain current pulsed (note 1) 52 A
V
GS
Gate to Source Voltage ±30 V
E
AS
Single pulsed Avalanche Energy (note 2) 828 mJ
E
AR
Repetitive Avalanche Energy (note 1) 152 mJ
dv/dt Peak diode Recov ery dv / dt (note 3) 4.5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 67.5 W
Derating Factor above 25
o
C 0.54 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Max imum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Ther mal ch aracteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 1.85
o
C/W
R
thcs
Thermal resistance, C ase to Sink -
o
C/W
R
thja
Thermal resistance, Junction to ambient 44
o
C/W
BV
DSS
: 500V
I
D
: 13A
R
DS(ON)
: 0.52ohm
1
2
3
SW13N50B
SAMWIN
1
2
3
1. Gate 2. Drain 3. Source
TO-220F
Item Sales Type Marking Package Packaging
1 SW F 13N50B
SW13N50 TO-220F TUBE
Or der Code s
