Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0 1/7
SW12N70D
N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-262
TO-220SF
/TO-220FT
V
DSS
Drain to source voltage 700 V
I
D
Continuous drain current (@T
C
=25
o
C) 12* A
Continuous drain current (@T
C
=100
o
C) 7.6* A
I
DM
Drain current pulsed (note 1) 48 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 608 mJ
E
AR
Repetitive avalanche energy (note 1) 36 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 26.1 89.3 37.9 W
Derating factor above 25
o
C 0.2 0.7 0.3 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-262
TO-220SF
/TO-220FT
R
thjc
Thermal resistance, Junction to case 4.7 1.4 3.3
o
C/W
R
thja
Thermal resistance, Junction to ambient 48 67 49
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
: 700V
I
D
: 12A
R
DS(ON)
: 0.75Ω
1. Gate 2. Drain 3. Source
TO-220F
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 12N70D
SW12N70D TO-220F TUBE
2 SW U 12N70D
SW12N70D TO-262 TUBE
3 SW MN 12N70D
SW12N70D TO-220SF TUBE
4 SW Y 12N70D
SW12N70D TO-220FT TUBE
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 0.75Ω)@V
GS
=10V
Low Gate Charge (Typ 47nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:LED, PC Power, Charge
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
1
2
3
TO-262
1
2
3
TO-220SF
TO-220FT
1
2
3