Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6
SW12N65D
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220SF/TO-220FT
V
DSS
Drain to source voltage 650 V
I
D
Continuous drain current (@T
C
=25
o
C) 12* A
Continuous drain current (@T
C
=100
o
C) 7.6* A
I
DM
Drain current pulsed (note 1) 48 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 398 mJ
E
AR
Repetitive avalanche energy (note 1) 35 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 34 W
Derating factor above 25
o
C 0.27 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220SF/TO-220FT
R
thjc
Thermal resistance, Junction to case 3.7
o
C/W
R
thja
Thermal resistance, Junction to ambient 48
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW MN12N65D
SW12N65D TO-220SF TUBE
2 SW Y12N65D
SW12N65D TO-220FT TUBE
N-channel Enhanced mode TO-220SF/TO-220FT MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 0.66Ω)@V
GS
=10V
Low Gate Charge (Typ 41nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED , Charge, PC Power
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 650V
I
D
: 12A
R
DS(ON)
: 0.66Ω
1
2
3
TO-220SF
1
2
3
TO-220FT
1
2
3
