Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2016. Rev. 2.0 1/6
SW125R08VS
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 80 V
I
D
Continuous drain current (@T
C
=25
o
C) 50* A
Continuous drain current (@T
C
=100
o
C) 31.5* A
I
DM
Drain current pulsed (note 1) 200 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 81 mJ
E
AR
Repetitive avalanche energy (note 1) 9 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 2.6 W
Derating factor above 25
o
C 0.02 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thja
Thermal resistance, Junction to ambient 49
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW K 125R08VS SW125R08VS SOP-8 REEL
N-channel Enhanced mode SOP-8 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 17mΩ)@V
GS
=4.5V
(Typ 10mΩ)@V
GS
=10V
Low Gate Charge (Typ 30nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Electronic Ballast, Motor Control,
Synchronous Rectification
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 80V
I
D
: 50A
R
DS(ON)
: 16mΩ @V
GS
=4.5V
10mΩ @V
GS
=10V
SOP-8
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
49
o
C/W on a 1 in
2
pad of 2oz copper.
G(4)
D(5,6,7,8)
S(1,2,3)
D
D
D
D
G
S
S
S
