Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
SW10N70K
May. 2016. Rev. 4.0 1/6
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220F TO-252
V
DSS
Drain to source voltage 700 V
I
D
Continuous drain current (@T
C
=25
o
C) 10* A
Continuous drain current (@T
C
=100
o
C) 6.3* A
I
DM
Drain current pulsed (note 1) 40 A
V
GS
Gate to source voltage
± 30
V
E
AS
Single pulsed avalanche energy (note 2) 120 mJ
E
AR
Repetitive avalanche energy (note 1) 15 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 25.5 240.4 W
Derating factor above 25
o
C 0.2 1.9 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220F TO-252
R
thjc
Thermal resistance, Junction to case 4.9 0.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 48.7
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
TO-220F
Order Codes
Item Sales Type Marking Package Packaging
1 SW F 10N70K SW10N70K TO-220F TUBE
2 SW D 10N70K SW10N70K TO-252 REEL
1
2
3
N-channel Enhanced mode TO-220F/TO-252 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 0.36Ω)@V
GS
=10V
Low Gate Charge (Typ 29nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charge,LED,TV-Power
General Description
This power MOSFET is produced with super junction advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 700V
I
D
: 10A
R
DS(ON)
: 0.36Ω
1
2
3
TO-252
1
2
3