Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2014. Rev.3.0
SW10N65K
Features
■ High ruggedness
■ R
DS(ON)
(Max 0.4Ω)@V
GS
=10V
■ Gate Charge (Typical 29nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
N-channel TO-220F/TO251N /TO-220 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO220F TO251N TO-220
V
DSS
Drain to Source Voltage 650 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 10* A
Continuous Drain Current (@T
C
=100
o
C) 6.3* A
I
DM
Drain current pulsed (note 1) 40 A
V
GS
Gate to Source Voltage
± 30
V
E
AS
Single pulsed Avalanche Energy (note 2) 270 mJ
E
AR
Repetitive Avalanche Energy (note 1) 60 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 25.5 96.2 178.6 W
Derating Factor above 25
o
C 0.2 0.77 1.43 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO220F TO251N TO-220
R
thjc
Thermal resistance, Junction to case 4.9 1.3 0.70
o
C/W
R
thcs
Thermal resistance, Case to Sink
o
C/W
R
thja
Thermal resistance, Junction to ambient 48.7 80.0 53.7
o
C/W
1/6
*. Drain current is limited by junction temperature.
BV
DSS
: 650V
I
D
: 10A
R
DS(ON)
: 0.4Ω
1. Gate 2. Drain 3. Source
1
2
3
1
2
3
TO-220F
SAMWIN
Item Sales Type Marking Package Packaging
1 SW F 10N65
SW10N65K TO-220F TUBE
2 SW I 10N65
SW10N65K TO251N TUBE
3 SW P 10N65
SW10N65K TO-220 TUBE
Order Codes
General Description
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
TO-251N
1
2
3
1
2
3
TO-220