Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
Features
■ High ruggedness
■ R
DS(ON)
(Max 10.5m Ω)@V
GS
=10V
■ Gate Charge (Typ 106nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC
converter block and switch mode power supply.
N-channel TO-220 MOSFET
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to Source Voltage 100 V
I
D
Continuous Drain Current (@T
C
=25
o
C) 100* A
Continuous Drain Current (@T
C
=100
o
C) 63* A
I
DM
Drain current pulsed (note 1) 400 A
V
GS
Gate to Source Voltage
± 20
V
E
AS
Single pulsed Avalanche Energy (note 2) 1121 mJ
E
AR
Repetitive Avalanche Energy (note 1) 171 mJ
dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 318 W
Derating Factor above 25
o
C 2.5 W/
o
C
T
STG
, T
J
Operating Junction Temperature & Storage Temperature -55 ~ + 150
o
C
T
L
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.39
o
C/W
R
thcs
Thermal resistance, Case to Sink 0.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 51.6
o
C/W
1/5
*. Drain current is limited by junction temperature.
BV
DSS
: 100V
I
D
: 100A
R
DS(ON)
: 10.5mΩ
1
2
3
SW100N10B
SAMWIN
Item Sales Type Marking Package Packaging
1 SW P 100N10 SW 100N10B TO-220 TUBE
Order Codes
1. Gate 2. Drain 3. Source
1
2
3
TO-220