Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jun. 2016. Rev. 3.0 1/6
SW078R08ET
N-channel Enhanced mode TO-263/TO-220 MOSFET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-263 TO-220
V
DSS
Drain to source voltage 80 V
I
D
Continuous drain current (@T
C
=25
o
C) 60* A
Continuous drain current (@T
C
=100
o
C) 38* A
I
DM
Drain current pulsed (note 1) 240 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 304 mJ
E
AR
Repetitive avalanche energy (note 1) 32 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 134 144 W
Derating factor above 25
o
C 1.1 1.2 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-263 TO-220
R
thjc
Thermal resistance, Junction to case 0.93 0.87
o
C/W
R
thja
Thermal resistance, Junction to ambient 53
o
C/W
*. Drain current is limited by junction temperature.
BV
DSS
:80V
I
D
:60A
R
DS(ON)
: 7.8mΩ
1. Gate 2. Drain 3. Source
TO-263
1
2
3
Order Codes
Item Sales Type Marking Package Packaging
1 SW B 078R08ET
SW078R08ET TO-263 TUBE
2 SW P 078R08ET
SW078R08ET TO-220 TUBE
1
2
3
Features
High ruggedness
Low R
DS(ON)
(Typ 7.8mΩ)@V
GS
=10V
Low Gate Charge (Typ 79nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Telecom, Computer,Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including
Fast switching time, low on resistance, low gate charge and especially excellent
Avalanche characteristics.
TO-220
1
2
3