Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 2.0 1/7
SW069R10VS
Absolute maximum ratings
Symbol Parameter
Value
Unit
DFN5*6 TO-251 TO-252 TO-220
V
DSS
Drain to source voltage 100 V
I
D
Continuous drain current (@T
C
=25
o
C) 70* A
Continuous drain current (@T
C
=100
o
C) 44* A
I
DM
Drain current pulsed (note 1) 280 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 277 mJ
E
AR
Repetitive avalanche energy (note 1) 18 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 158.2 158.2 195.3 W
Total power dissipation (@T
a
=25
o
C) 2.7 W
Derating factor above 25
o
C 0.02 1.3 1.3 1.6 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
DFN5*6 TO-251 TO-252 TO-220
R
thjc
Thermal resistance, Junction to case 0.79 0.79 0.64
o
C/W
R
thja
Thermal resistance, Junction to ambient 47(Note) 74 50
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW HA 069R10VS
SW069R10VS
DFN5*6 REEL
2 SW I 069R10VS
SW069R10VS
TO-251 TUBE
3 SW D 069R10VS
SW069R10VS
TO-252 REEL
4 SW P 069R10VS
SW069R10VS
TO-220 TUBE
N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 7.1mΩ)@V
GS
=10V
Low Gate Charge (Typ 45nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Li Battery Protect Board,
Synchronous Rectification, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 100V
I
D
: 70A
R
DS(ON)
: 7.1mΩ@V
GS
=10V
9.0mΩ@V
GS
=4.5V
G
D
S
DFN5*6 TO-251
TO-252
1
2
3
TO-220
1
2
3
G(4)
D(5,6,7,8)
S(1,2,3)
TO-251/TO-252/TO-220: 1.Gate 2.Drain 3.Source
DFN5*6: 4.Gate 5,6,7,8.Drain 1,2,3.Source
1
2
3
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
DFN5*6 R
thja
: 47
o
C/W on a 1 in
2
pad of 2oz copper.