Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6
SW069R06VT
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-251 DFN5*6
V
DSS
Drain to source voltage 60 V
I
D
Continuous drain current (@T
C
=25
o
C) 60* A
Continuous drain current (@T
C
=100
o
C) 38* A
I
DM
Drain current pulsed (note 1) 240 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 324 mJ
E
AR
Repetitive avalanche energy (note 1) 18 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 208 1.6 W
Derating factor above 25
o
C 1.7 0.01 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-251 DFN5*6
R
thjc
Thermal resistance, Junction to case 0.6
o
C/W
R
thja
Thermal resistance, Junction to ambient 77 77
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW I 069R06VT
SW069R06VT TO-251 TUBE
2 SW HA 069R06VT
SW069R06VT DFN5*6 REEL
N-channel Enhanced mode TO-251/DFN5*6 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 7.0mΩ)@V
GS
=4.5V
(Typ 6.0mΩ)@V
GS
=10V
Low Gate Charge (Typ 83nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Electronic Ballast, Motor Control
Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics,
including fast switching time, low on resistance, low gate charge and especially
excellent avalanche characteristics.
BV
DSS
: 60V
I
D
: 60A
R
DS(ON)
:7.0mΩ@V
GS
=4.5V
6.0mΩ@V
GS
=10V
1
2
3
TO-251
1
2
3
DFN5*6