• 当前位置:
  • 首页
  • >
  • PDF资料
  • >
  • SW065R85VS PDF文件及第1页内容在线浏览

SW065R85VS

SW065R85VS首页预览图
型号: SW065R85VS
PDF文件:
  • SW065R85VS PDF文件
  • SW065R85VS PDF在线浏览
功能描述: N-channel Enhanced mode SOP-8 MOSFET
PDF文件大小: 723.89 Kbytes
PDF页数: 共6页
制造商: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.]
制造商LOGO: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.] LOGO
制造商网址: http://www.samwinsemi.com
捡单宝SW065R85VS
PDF页面索引
120%
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Apr. 2017. Rev. 2.0 1/6
SW065R85VS
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 85 V
I
D
Continuous drain current (@T
C
=25
o
C) 60* A
Continuous drain current (@T
C
=100
o
C) 38* A
I
DM
Drain current pulsed (note 1) 240 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 283 mJ
E
AR
Repetitive avalanche energy (note 1) 14 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@Ta=25
o
C) 2.8 W
Derating factor above 25
o
C 0.02 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thja
Thermal resistance, Junction to ambient 44
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW K 065R85VS
SW065R85VS SOP-8 REEL
N-channel Enhanced mode SOP-8 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 7.9m)@V
GS
=4.5V
Low R
DS(ON)
(Typ 5.8m)@V
GS
=10V
Low Gate Charge (Typ 65nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 85V
I
D
: 60A
R
DS(ON)
: 7.9m@V
GS
=4.5V
5.8m@V
GS
=10V
G(4)
D(5,6,7,8
S(1,2,3)
SOP-8
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
SOP-8 R
thja
: 44
o
C/W on a 1 in
2
pad of 2oz copper.
D
D
D
D
G
S
S
S
购买、咨询产品请填写询价信息:(3分钟左右您将得到回复)
询价型号*数量*批号封装品牌其它要求
删除
删除
删除
删除
删除
增加行数
  •  公司名:
  • *联系人:
  • *邮箱:
  • *电话:
  •  QQ:
  •  微信:

  • 关注官方微信

  • 联系我们
  • 电话:13714778017
  • 周一至周六:9:00-:18:00
  • 在线客服:

天天IC网由深圳市四方好讯科技有限公司独家运营

天天IC网 ( www.ttic.cc ) 版权所有©2014-2023 粤ICP备15059004号

因腾讯功能限制,可能无法唤起QQ临时会话,(点此复制QQ,添加好友),建议您使用TT在线询价。

继续唤起QQ 打开TT询价