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SW055R03VT

SW055R03VT首页预览图
型号: SW055R03VT
PDF文件:
  • SW055R03VT PDF文件
  • SW055R03VT PDF在线浏览
功能描述: N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET
PDF文件大小: 701.29 Kbytes
PDF页数: 共7页
制造商: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.]
制造商LOGO: SEMIPOWER[Xian Semipower Electronic Technology Co., Ltd.] LOGO
制造商网址: http://www.samwinsemi.com
捡单宝SW055R03VT
供应商
型号
品牌
封装
批号
库存数量
备注
询价
  • 深圳市坤融电子有限公司

    16

    0755-2399097517318082080,13510287235肖瑶,树平航都大厦11FG11012384

  • SW055R03VT
  • SAMWIN 
  • DFN3X3-8 
  • 2021+ 
  • 88530 
  • 原装一级代理 

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    6

    0755-2100667218188642307王小康0755-21006672深圳市龙华区民治街道新牛社区金地梅陇镇9栋4单元14C万三科技,秉承原装11013028

  • SW055R03VT
  • Samwin(芯派) 
  • 原厂COC随货 
  • 2022+ 
  • 500000 
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    11

    0755-83244512,8324771018923764396李先生,朱小姐0755-83246799都会电子城B座31U11014973

  • SW055R03VT
  • Samwin(芯派) 
  • DFN(3x3) 
  • 22+ 
  • 36858 
  • 正规渠道/品质保证/原装正品现货 

  • 深圳市祺雅电子科技有限公司

    4

    1509997701915099977019张顺方深圳市福田区华强北海外装饰大厦3栋3单元60811016016

  • SW055R03VT
  • Samwin(芯派) 
  • DFN3*3 
  • 22  
  • 39890 
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    16

    0755-8328588218188616606陈妍深圳市福田区深南中路3023号汉国中心55楼11010804

  • SW055R03VT
  • Samwin(芯派) 
  • DFN-8(3x3) 
  • 23+ 
  • 35000 
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    4

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  • SW055R03VT
  • SAMWIN 
  • DFN-8.贴片 
  • ▉▉:2年内 
  • ▉▉:57500 
  • ▉▉¥10一有问必回一特殊渠道一有长期订货一备货HK仓库 

PDF页面索引
120%
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 4.0 1/7
SW055R03VT
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-252 TO-251 DFN3*3
V
DSS
Drain to source voltage 30 V
I
D
Continuous drain current (@T
C
=25
o
C) 80* A
Continuous drain current (@T
C
=100
o
C) 50* A
I
DM
Drain current pulsed (note 1) 320 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 83 mJ
E
AR
Repetitive avalanche energy (note 1) 8 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 74 83 W
Total power dissipation (@Ta=25
o
C) 2.9 W
Derating factor above 25
o
C 0.6 0.7 0.02 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-252 TO-251 DFN3*3
R
thjc
Thermal resistance, Junction to case 1.7 1.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 73 43
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW D 055R03VT
SW055R03VT TO-252 REEL
2 SW I 055R03VT
SW055R03VT TO-251 TUBE
3 SW H 055R03VT
SW055R03V DFN3*3 REEL
N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 6.2m)@V
GS
=4.5V
(Typ 4.4m)@V
GS
=10V
Low Gate Charge (Typ 25nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC Converter,Motor Control
Synchronous Rectification
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 30V
I
D
: 80A
R
DS(ON)
: 6.2m@V
GS
=4.5V
4.4m@V
GS
=10V
G
D
S
TO-252
1
2
3
TO-251
1
2
3
DFN3*3
G(4)
D(5,6,7,8)
S(1,2,3)
TO-252/TO-251:1. Gate 2. Drain 3. Source
DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user‘s
board design. DFN3*3 R
thja
: 43
o
C/W on a 1 in
2
pad of 2oz copper.
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