Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 4.0 1/7
SW055R03VT
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-252 TO-251 DFN3*3
V
DSS
Drain to source voltage 30 V
I
D
Continuous drain current (@T
C
=25
o
C) 80* A
Continuous drain current (@T
C
=100
o
C) 50* A
I
DM
Drain current pulsed (note 1) 320 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 83 mJ
E
AR
Repetitive avalanche energy (note 1) 8 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 74 83 W
Total power dissipation (@Ta=25
o
C) 2.9 W
Derating factor above 25
o
C 0.6 0.7 0.02 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-252 TO-251 DFN3*3
R
thjc
Thermal resistance, Junction to case 1.7 1.5
o
C/W
R
thja
Thermal resistance, Junction to ambient 73 43
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW D 055R03VT
SW055R03VT TO-252 REEL
2 SW I 055R03VT
SW055R03VT TO-251 TUBE
3 SW H 055R03VT
SW055R03V DFN3*3 REEL
N-channel Enhanced mode TO-252/TO-251/DFN3*3 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 6.2mΩ)@V
GS
=4.5V
(Typ 4.4mΩ)@V
GS
=10V
Low Gate Charge (Typ 25nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC Converter,Motor Control,
Synchronous Rectification
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 30V
I
D
: 80A
R
DS(ON)
: 6.2mΩ@V
GS
=4.5V
4.4mΩ@V
GS
=10V
G
D
S
TO-252
1
2
3
TO-251
1
2
3
DFN3*3
G(4)
D(5,6,7,8)
S(1,2,3)
TO-252/TO-251:1. Gate 2. Drain 3. Source
DFN3*3: 4.Gate 5,6,7,8.Drain 1,2,3.Source
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user‘s
board design. DFN3*3 R
thja
: 43
o
C/W on a 1 in
2
pad of 2oz copper.