Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2017. Rev. 4.0 1/7
SW051R08ES
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-263 TO-220
V
DSS
Drain to source voltage 80 V
I
D
Continuous drain current (@T
C
=25
o
C) 120* A
Continuous drain current (@T
C
=100
o
C) 85* A
I
DM
Drain current pulsed (note 1) 480 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 490 mJ
E
AR
Repetitive avalanche energy (note 1) 25 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 192.3 215.5 W
Derating factor above 25
o
C 1.53 1.72 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-263 TO-220
R
thjc
Thermal resistance, Junction to case 0.65 0.58
o
C/W
R
thja
Thermal resistance, Junction to ambient 50
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW B 051R08ES
SW051R08ES TO-263 TUBE
2 SW P 051R08ES
SW051R08ES TO-220 TUBE
N-channel Enhanced mode TO-263/TO-220/TO-220F MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 5.1mΩ)@V
GS
=10V
Low Gate Charge (Typ 44nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 80V
I
D
: 120A
R
DS(ON)
: 5.1mΩ
1
2
3
1
2
3
TO-263
1
2
3
TO-220