Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Nov. 2016. Rev. 2.0 1/6
SW045R08ET
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 80 V
I
D
Continuous drain current (@T
C
=25
o
C) 100* A
Continuous drain current (@T
C
=100
o
C) 63* A
I
DM
Drain current pulsed (note 1) 400 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 1511 mJ
E
AR
Repetitive avalanche energy (note 1) 57 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 208 W
Derating factor above 25
o
C 1.7 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thjc
Thermal resistance, Junction to case 0.6
o
C/W
R
thja
Thermal resistance, Junction to ambient 57
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW B 045R08ET
SW045R08ET TO-263 TUBE
N-channel Enhanced mode TO-263 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 3.9mΩ)@V
GS
=10V
Low Gate Charge (Typ 139nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification,
Li Battery Protect Board, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 80V
I
D
: 100A
R
DS(ON)
:3.9mΩ
1
2
3
TO-263
1
2
3