Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 2.0 1/6
SW045R02VT
Absolute maximum ratings
Symbol Parameter Value Unit
V
DSS
Drain to source voltage 20 V
I
D
Continuous drain current (@T
C
=25
o
C) 80* A
Continuous drain current (@T
C
=100
o
C) 50* A
I
DM
Drain current pulsed (note 1) 320 A
V
GS
Gate to source voltage
± 12
V
E
AS
Single pulsed avalanche energy (note 2) 122 mJ
E
AR
Repetitive avalanche energy (note 1) 9 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@Ta=25
o
C) 2.6 W
Derating factor above 25
o
C 0.02 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
Thermal characteristics
Symbol Parameter Value Unit
R
thja
Thermal resistance, Junction to ambient 48
o
C/W
*. Drain current is limited by junction temperature.
Order Codes
Item Sales Type Marking Package Packaging
1 SW H 045R02VT
SW045R02V DFN3*3 REEL
N-channel Enhanced mode DFN3*3 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 4.6mΩ)@V
GS
=2.5V
Low R
DS(ON)
(Typ 3.7mΩ)@V
GS
=4.5V
Low R
DS(ON)
(Typ 3.3mΩ)@V
GS
=10V
Low Gate Charge (Typ 49nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: DC-DC Converter,Motor Control
Synchronous Rectification
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 20V
I
D
: 80A
R
DS(ON)
: 4.6mΩ@V
GS
=2.5V
3.7mΩ@V
GS
=4.5V
3.3mΩ@V
GS
=10V
G
D
S
DFN3*3
Gate:4 Drain:5,6,7,8 Source:1,2,3
G(4)
D(5,6,7,8)
S(1,2,3)
Note: R
thja
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is d
efined as the solder mounting surface of the drain pins. R
thjc
is guaranteed by design while R
thca
is determined by the user's
board design.
DFN3*3 R
thja
: 48
o
C/W on a 1 in
2
pad of 2oz copper.