Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Mar. 2017. Rev. 2.0 1/6
SW039R06ET
Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 TO-263
V
DSS
Drain to source voltage 60 V
I
D
Continuous drain current (@T
C
=25
o
C) 90* A
Continuous drain current (@T
C
=100
o
C) 57* A
I
DM
Drain current pulsed (note 1) 360 A
V
GS
Gate to source voltage
± 20
V
E
AS
Single pulsed avalanche energy (note 2) 1448 mJ
E
AR
Repetitive avalanche energy (note 1) 68 mJ
dv/dt Peak diode recovery dv/dt (note 3) 5 V/ns
P
D
Total power dissipation (@T
C
=25
o
C) 231 219 W
Derating factor above 25
o
C 1.85 1.75 W/
o
C
T
STG
, T
J
Operating junction temperature & storage temperature -55 ~ + 150
o
C
T
L
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
300
o
C
Thermal characteristics
Symbol Parameter
Value
Unit
TO-220 TO-263
R
thjc
Thermal resistance, Junction to case 0.54 0.57
o
C/W
R
thja
Thermal resistance, Junction to ambient 54
o
C/W
*. Drain current is limited by junction temperature.
1. Gate 2. Drain 3. Source
Order Codes
Item Sales Type Marking Package Packaging
1 SW P 039R06ET
SW039R06ET TO-220 TUBE
2 SW B 039R06ET
SW039R06ET TO-263 TUBE
N-channel Enhanced mode TO-220/TO-263 MOSFET
Features
High ruggedness
Low R
DS(ON)
(Typ 3.6mΩ)@V
GS
=10V
Low Gate Charge (Typ 108nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Telecom, Computer, Inverter
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
BV
DSS
: 60V
I
D
: 90A
R
DS(ON)
:3.6mΩ
1
2
3
TO-220
1
2
3
TO-263
1
2
3