Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 5.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Absolute Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
25 °C
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code: SS52 — SS520
Simplified outline SMAF and symbol
MECHANICAL DATA
pprox. Weight:
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A 27mg / 0.00095oz
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
20
40
V
14
28
V
V
5.0
-55 ~ +150
A
A
V
mA
pF
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 5 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS52F SS54F SS56F SS58F SS510F SS512F SS515F SS520F
T = 25°C
a
T =100°C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
j
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
700
-55 ~ +150
°C
120
120
150
105
150
200
140
200
1.0
50
500
50
Typical Thermal Resistance
R
θJA
°C/W
150
70 84
0.45
1
2
Page 1 of 3
SS52F THRU SS520F
(1)
(2)
175
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
(1)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0