Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200V
Forward Current - 3.0A
FEATURES
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Absolute Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
25 °C
MECHANICAL DATA
pprox. Weight: 57
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A mg / 0.002oz
Page 1 of 3
SS32BF THRU SS320BF
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Simplified outline SMBF and symbol
1
2
Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
20
40
V
14
28
V
V
3.0
0.5
5
-55 ~ +150
A
A
V
mA
°C
Units
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 3 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS32BF SS34BF SS36BF SS38BF SS310BF SS312BF SS315BF SS320BF
T = 25°C
a
T =100°C
a
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
0.3
3
7080
70 84
65
Typical Thermal Resistance
°C/W
R
θJA
Typical Junction Capacitance
pF
C
j
450 400
(1)
(2)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
(1)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0