Maximum DC Blocking Voltage
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Maximum Average Forward Rectified Current
Typical Junction Capacitance
20
40
V
14
28
V
V
2.0
-55 ~ +150
A
A
V
mA
pF
°C
Units
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 2.0A
Absolute Maximum Ratings and Electrical characteristics
Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
25 °C
20 40
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
Max Instantaneous Forward Voltage at 2 A
Maximum DC Reverse Current
at Rated DC Reverse Voltage
Operating Junction Temperature Range
SS22F SS24F SS26F SS28F SS210F SS212F SS215F SS220F
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Simplified outline SMAF and symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
C
j
T
j
Symbols
T
stg
Storage Temperature Range
60
42
60
80
56
80
100
100
0.55 0.70 0.85
160
-55 ~ +150
°C
120
120
150
105
150
200
140
200
0.95
80
4050
70 84
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMAF
• Terminals: Solderable per MIL-STD-750, Method 2026
• 27mg / 0.00095ozApprox. Weight:
Top View
Marking Code: SS22 — SS220
0.5
5
T = 25°C
a
T =100°C
a
I
R
0.3
3
1
2
80
Typical Thermal Resistance
°C/W
R
θJA
Page 1 of 3
SS22F THRU SS220F
(1)
(2)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
(1)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0