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S1AF THRU S1MF
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
°C
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 1 A
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Maximum DC Reverse Current = 25 °C
at Rated DC Blocking Voltage =125 °C
T
a
T
a
（1）
Typical Junction Capacitance
（2）
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1
30
1.1
5
50
15
80
27
-55 ~ +150
A
A
V
μA
pF
°C
Maximum Ratings and Electrical characteristics
Typical Thermal Resistance
R
θJA
R
θJC
°C/W
C
j
T , T
j
stg
Symbols
Units
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: SMAF
Terminals: Solderable per MIL-STD-750, Method 2026
pprox. Weight: 27mg / 0.00095oz
•
•
•
•
•
•
•
• A
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Top View
Marking Code： S1A-S1M
Simplified outline SMAF and symbol
1
2
S1AF S1BF S1DF S1GF S1JF S1KF S1MF
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
（1）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
Maximum Average Forward Rectified Current
at T = 125 °C
c
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
