Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1.2 A
FEATURES
▪For surface mounted applications
▪Low profile package
▪Glass Passivated Chip Junction
▪Ideal for automated placement
▪Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
▪Case: SOD-123FL
▪Terminals: Solderable per MIL-STD-750, Method 2026
▪Approx. Weight:15mg 0.00053oz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
Simplified outline SOD-123FL and symbol
1
2
Page 1 of 3
S12AW THRU S12MW
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 1.2 A
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS voltage
Operating and Storage Temperature Range
Maximum DC Reverse Current = 25 °C
at Rated DC Blocking Voltage =125 °C
T
a
T
a
(1)
Typical Junction Capacitance
(2)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1.2
40
1.0
5
50
18
80
25
-55 ~ +150
A
A
V
μA
pF
°C
Typical Thermal Resistance
°C/W
C
j
T , T
j
stg
Symbols
Units
Ratings at 25 ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
°C
Maximum Ratings and Electrical characteristics
S12AW S12BW S12DW S12GW S12JW S12KW S12MW
Measured at 1 MHz and applied reverse voltage of 4 V D.C
(2)
(1)
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
R
θJA
R
θJC
Maximum Average Forward Rectified Current
at T = 125 °C
c
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0